LOW DARK CURRENT QUASI-SCHOTTKY BARRIER MSM-PHOTODIODE STRUCTURES ON N-GA0.47IN0.53AS WITH P+-GA0.47IN0.53AS CAP LAYER

被引：8

作者：

AVERIN, SV

KOHL, A

MULLER, R

KUSTERS, AM

WISSER, J

HEIME, K

机构：

[1] Institut für Halbleitertechnik RWTH Aachen, Templergra-ben JJ

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 11期

关键词：

PHOTODIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The p+-cap layer was used to fabricate a metal-semiconductor-metal (MSM) interdigitated photodetector on Ga0.47In0.53As. The measured barrier height was PHI(Bn) = 0.52 V, the ideality factor n = 1.1 and average dark current density 2 mA/cm2. A rise time of 45 ps at lambda = 1.3-mu-m under 2 V bias was measured for an MSM photodiode with 3-mu-m finger width and finger gaps and an active area of 100 x 100-mu-m2.

引用

页码：992 / 995

页数：4

共 15 条

[11] INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS FOR LONG WAVELENGTH OPTICAL COMMUNICATIONS [J].