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MASKLESS ION-IMPLANTATION SYSTEM FOR 3-DIMENSIONAL FINE DOPING STRUCTURES IN III-V COMPOUND SEMICONDUCTORS

被引：11
作者：
MIYAUCHI, E
HASHIMOTO, H
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期
关键词：
D O I：
10.1016/0168-583X(87)90806-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：104 / 111
页数：8
相关论文
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    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 189 - 193
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    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1113 - 1116
  • [8] COMPUTER CONTROL OF MASKLESS ION IMPLANTER WITH AU-SI-BE LM ION-SOURCE FOR III-V COMPOUND SEMICONDUCTORS
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    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 62 - 66
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