VOLTAGE SHIFTS OF FOWLER-NORDHEIM TUNNELING J-V PLOTS IN THIN GATE OXIDE MOS STRUCTURES DUE TO TRAPPED CHARGES

被引：31

作者：

OH, SJ

YEOW, YT

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 06期

关键词：

D O I：

10.1016/0038-1101(89)90035-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：507 / 511

页数：5

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