EFFECT OF SUBSTRATE GENERATION CURRENT ON OXIDE IV MEASUREMENT ON P-TYPE MOS STRUCTURES

被引：10

作者：

LEE, HS

机构：

[1] Electronics Department, General Motors Research Laboratories, Warren

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 04期

关键词：

D O I：

10.1016/0038-1101(79)90091-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The values of the bulk generation current and surface generation current extracted from slow ramp I-V and C-V measurements of p-type substrate MOS capacitors are found to be consistent with the results from transient capacitance measurement. The shape of the I-V curve for high positive gate biases is found to depend on the formation of a deep depletion region in the p-type substrate. © 1979.

引用

页码：385 / 389

页数：5

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