MODIFICATION OF MAGNETOCONDUCTANCE OF 2-DIMENSIONAL ELECTRON-GAS BY ALTERING BOUNDARY-CONDITIONS IN THIRD DIMENSION

被引:12
作者
LAKHANI, AA [1 ]
STILES, PJ [1 ]
机构
[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912
关键词
D O I
10.1016/0038-1098(75)90637-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:993 / 996
页数:4
相关论文
共 9 条
[1]   SCATTERING OF CHARGE-CARRIERS IN SILICON SURFACE-LAYERS [J].
CHENG, YC ;
SULLIVAN, EA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :923-925
[2]   ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].
CHENG, YC ;
SULLIVAN, EA .
SURFACE SCIENCE, 1973, 34 (03) :717-731
[3]   EFFECT OF CHARGE INHOMOGENEITIES ON SILICON SURFACE MOBILITY [J].
CHENG, YC .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :2425-2427
[4]   MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].
FOWLER, AB ;
FANG, FF ;
HOWARD, WE ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1966, 16 (20) :901-&
[5]   SUBSTRATE BIAS EFFECTS ON ELECTRON-MOBILITY IN SILICON INVERSION LAYERS AT LOW-TEMPERATURES [J].
FOWLER, AB .
PHYSICAL REVIEW LETTERS, 1975, 34 (01) :15-17
[6]  
MATSUMOTO Y, TO BE PUBLISHED
[7]  
SAH CT, 1973, B AM PHYS SOC, V18, P344
[8]   PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].
STERN, F ;
HOWARD, WE .
PHYSICAL REVIEW, 1967, 163 (03) :816-&
[9]  
SZE SM, 1969, PHYSICS SEMICONDUCTO