DEEP DONOR LEVELS IN HE IMPLANTED N-TYPE SILICON

被引：6

作者：

YOSHIZAWA, M

MIYAKE, M

HARADA, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 02期

关键词：

D O I：

10.1149/1.2115605

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：453 / 455

页数：3

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