BAND-TO-BAND AUGER RECOMBINATION IN SILICON BASED ON A TUNNELING TECHNIQUE .1. THEORY

被引：4

作者：

KRIEGER, G

SWANSON, RM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3448 / 3455

页数：8

共 40 条

[1]

BALKANSKI M, 1977, PHYS STATUS SOLIDI, V31, P346

[2] AUGER-RECOMBINATION IN SI [J].

BECK, JD ;

CONRADT, R .

SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95

[3]

BLINOV LM, 1968, FIZ TVERD TELA+, V9, P2537

[4]

COGNINA SF, 1969, J ELECTROCHEM SOC, V116, P498

[5]

CONWELL EM, 1967, SOLID STATE PHYS, V9

[6] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

[7] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED [J].

HEIBLUM, M .

SOLID-STATE ELECTRONICS, 1981, 24 (04) :343-366

[8] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[9] CARRIER RECOMBINATION THROUGH DONORS-ACCEPTORS IN HEAVILY DOPED SILICON [J].

HU, C ;

OLDHAM, WG .

APPLIED PHYSICS LETTERS, 1979, 35 (08) :636-639

[10] FOWLER-NORDHEIM ELECTRON-TUNNELING IN THIN SI-SIO2-AL STRUCTURES [J].

KRIEGER, G ;

SWANSON, RM .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5710-5717

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