PHOTOEMISSION-STUDY OF NITROGEN-IMPLANTED GAAS-SURFACES

被引：5

作者：

CARIN, R ^{[1
]}

LEMOEL, A ^{[1
]}

DURAUD, JP ^{[1
]}

机构：

[1] CENS,DEPT PHYSICOCHIM,F-91191 GIF SUR YVETTE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.343180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5051 / 5056

页数：6

共 24 条

[1] SILICON-NITRIDE-GALLIUM-ARSENIDE MIS STRUCTURES PRODUCED BY PLASMA ENHANCED DEPOSITION
BAYRAKTAROGLU, B
JOHNSON, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3515 - 3519
[2] BAYRAKTAROGLU B, 1980, I PHYS C SER, V50, P280
[3] OXYGEN INTERACTION WITH GAAS-SURFACES - XPS-UPS STUDY
BRUNDLE, CR
SEYBOLD, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1186 - 1190
[4] CARIN R, 1982, VIDE COUCHES MINCE S, V212, P157
[5] PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON RADIATION .1. OVERVIEWS OF VALENCE-BAND STRUCTURE FOR GE, GAAS, GAP, INSB, ZNSE, CDTE, AND AGL
EASTMAN, DE
GROBMAN, WD
FREEOUF, JL
ERBUDAK, M
[J]. PHYSICAL REVIEW B, 1974, 9 (08): : 3473 - 3488
[6] FELDMAN LC, 1986, FUNDAMENTALS SURFACE, P126
[7] CLEANING AND NITRIDATION OF GAAS-SURFACES IN MULTIPOLAR PLASMAS INVESTIGATED BY INSITU PHOTOEMISSION AND SPECTROSCOPIC ELLIPSOMETRY
FRIEDEL, P
LANDESMAN, JP
BOHER, P
SCHNEIDER, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1129 - 1134
[8] ELECTRONIC-STRUCTURE OF AN AIN FILM PRODUCED BY ION-IMPLANTATION, STUDIED BY ELECTRON-SPECTROSCOPY
GAUTIER, M
DURAUD, JP
LEGRESSUS, C
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 574 - 580
[9] PHOTOEMISSION-STUDIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS (001) SURFACES EXPOSED TO A NITROGEN PLASMA
GOURRIER, S
SMIT, L
FRIEDEL, P
LARSEN, PK
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3993 - 3997
[10] REACTIVE SPUTTERING OF GALLIUM NITRIDE THIN-FILMS FOR GAAS MIS STRUCTURES
HARIU, T
USUBA, T
ADACHI, H
SHIBATA, Y
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 252 - 253

← 1 2 3 →