TEMPERATURE-DEPENDENT AL/GAAS(110) INTERFACE FORMATION AND ADATOM ENERGY REFERENCES

被引：22

作者：

ANDERSON, SG

ALDAO, CM

WADDILL, GD

VITOMIROV, IM

SEVERTSON, SJ

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.40.8305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8305 / 8312

页数：8

共 38 条

[1] 3D TRANSITION-METALS ON INP(110) - A COMPARATIVE-STUDY OF REACTIVE INTERFACE EVOLUTION
ALDAO, CM
VITOMIROV, IM
XU, F
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1988, 37 (11): : 6019 - 6026
[2] TEMPERATURE EFFECTS FOR TI/GAAS(110) INTERFACE FORMATION INVOLVING CLUSTER AND ATOM DEPOSITION
ALDAO, CM
WADDILL, GD
ANDERSON, SG
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1989, 40 (05): : 2932 - 2939
[3] DOPANT CONCENTRATION DEPENDENCES AND SYMMETRIC FERMI-LEVEL MOVEMENT FOR METAL N-TYPE AND P-TYPE GAAS(110) INTERFACES FORMED AT 60-K
ALDAO, CM
ANDERSON, SG
CAPASSO, C
WADDILL, GD
VITOMIROV, IM
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1989, 39 (17): : 12977 - 12980
[4] ANDERSON S, UNPUB
[5] ELECTRON-ENERGY LOSS SPECTROSCOPY FROM GAAS(110) INTERFACES
BONAPACE, CR
TU, DW
LI, K
KAHN, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1099 - 1102
[6] BONAPACE CR, 1984, J PHYS-PARIS, V45, pC5
[7] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[8] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES
CAO, R
MIYANO, K
KENDELEWICZ, T
CHIN, KK
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 998 - 1002
[9] ELECTRONIC-STRUCTURE OF THE AL-GAAS(110) SURFACE CHEMISORPTION SYSTEM
CHELIKOWSKY, JR
CHADI, DJ
COHEN, ML
[J]. PHYSICAL REVIEW B, 1981, 23 (08): : 4013 - 4022
[10] PHOTOEMISSION FROM SURFACE-ATOM CORE LEVELS, SURFACE DENSITIES OF STATES, AND METAL-ATOM CLUSTERS - A UNIFIED PICTURE
CITRIN, PH
WERTHEIM, GK
[J]. PHYSICAL REVIEW B, 1983, 27 (06): : 3176 - 3200

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