TEMPERATURE-DEPENDENT AL/GAAS(110) INTERFACE FORMATION AND ADATOM ENERGY REFERENCES

被引：22

作者：

ANDERSON, SG

ALDAO, CM

WADDILL, GD

VITOMIROV, IM

SEVERTSON, SJ

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.40.8305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8305 / 8312

页数：8

共 38 条

[31] TANG JYF, 1984, J VAC SCI TECHNOL B, V2, P459, DOI 10.1116/1.582895
[32] AG AND CO CLUSTER DEPOSITION ON GAAS(110) - FERMI LEVEL PINNING IN THE ABSENCE OF METAL-INDUCED GAP STATES AND DEFECTS
WADDILL, GD
ALDAO, CM
VITOMIROV, IM
ANDERSON, SG
CAPASSO, C
WEAVER, JH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 950 - 957
[33] WANDELT K, 1987, STUDIES SURFACE SCI, V32
[34] WEAVER JH, 1988, ANAL TECHNIQUES THIN, V27
[35] AL ON GAAS(110) REVISITED - KINETIC CONSIDERATIONS
WILLIAMS, MD
CHIN, KK
MCCANTS, CE
MAHOWALD, PH
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 939 - 942
[36] STRUCTURAL AND ELECTRONIC-PROPERTIES OF THE AL-GAAS(110) INTERFACE
ZHANG, SB
COHEN, ML
LOUIE, SG
[J]. PHYSICAL REVIEW B, 1986, 34 (02): : 768 - 772
[37] AL ON GAAS(110) INTERFACE - POSSIBILITY OF ADATOM CLUSTER FORMATION
ZUNGER, A
[J]. PHYSICAL REVIEW B, 1981, 24 (08) : 4372 - 4391
[38] FERMI-LEVEL POSITION AT A SEMICONDUCTOR-METAL INTERFACE
ZUR, A
MCGILL, TC
SMITH, DL
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 2060 - 2067