NONTHERMAL LASER-INDUCED RECRYSTALLIZATION OF AMORPHOUS-SILICON

被引：4

作者：

BAILEY, J ^{[1
]}

WEBER, ER ^{[1
]}

OPSAL, J ^{[1
]}

ROSENCWAIG, A ^{[1
]}

机构：

[1] THERMAWAVE INC,FREMONT,CA 94539

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.44.13116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-intensity laser illumination has been found to induce recrystallization of amorphous layers in ion-implanted silicon wafers. With the conditions used here, the temperature rise is much lower than that usually required for annealing of amorphous silicon. Therefore, this is an observation of recombination-induced nonthermal recrystallization of amorphous silicon layers.

引用

页码：13116 / 13119

页数：4

共 19 条

[1]

ALFANO RR, 1984, SEMICONDUCTORS PROBE, V2

[2] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].