NBN FILM DEPOSITION USING OPTICAL-EMISSION SPECTROSCOPY

被引:3
作者
BHUSHAN, M
机构
关键词
D O I
10.1109/TMAG.1987.1065013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:843 / 846
页数:4
相关论文
共 10 条
[1]   DEPOSITION RATE OF METALLIC THIN-FILMS IN REACTIVE SPUTTERING PROCESS [J].
ABE, T ;
YAMASHINA, T .
THIN SOLID FILMS, 1975, 30 (01) :19-27
[2]   RELATIONSHIP BETWEEN STRUCTURE AND SPUTTERING PARAMETERS IN NBN FILMS [J].
ALESSANDRINI, EI ;
SADAGOPAN, V ;
LAIBOWITZ, RB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :188-+
[3]   PROPERTIES OF NBN THIN-FILMS DEPOSITED ON AMBIENT-TEMPERATURE SUBSTRATES [J].
BACON, DD ;
ENGLISH, AT ;
NAKAHARA, S ;
PETERS, FG ;
SCHREIBER, H ;
SINCLAIR, WR ;
VANDOVER, RB .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6509-6516
[4]   SUPERCONDUCTING AND STRUCTURE PROPERTIES OF NIOBIUM NITRIDE PREPARED BY RF MAGNETRON SPUTTERING [J].
CUKAUSKAS, EJ ;
CARTER, WL ;
QADRI, SB .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (07) :2538-2542
[5]   DIMENSIONAL EFFECTS ON CURRENT AND FIELD PROPERTIES IN NBN FILMS [J].
GAVALER, JR ;
SANTHANAM, AT ;
BRAGINSKI, AI ;
ASHKIN, M ;
JANOCKO, MA .
IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) :573-576
[6]   OPTICAL SPECTROSCOPY FOR DIAGNOSTICS AND PROCESS-CONTROL DURING GLOW-DISCHARGE ETCHING AND SPUTTER DEPOSITION [J].
GREENE, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05) :1718-1729
[7]   REACTIVE SPUTTERING OF METALS IN OXIDIZING ATMOSPHERES [J].
HELLER, J .
THIN SOLID FILMS, 1973, 7 (02) :163-176
[8]   SUPERCONDUCTING TRANSITION TEMPERATURES OF RF SPUTTERED NBN FILMS [J].
KESKAR, KS ;
YAMASHITA, T ;
ONODERA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (03) :370-+
[9]   HIGH-TC SUPERCONDUCTING NBN FILMS DEPOSITED AT ROOM-TEMPERATURE [J].
THAKOOR, S ;
LAMB, JL ;
THAKOOR, AP ;
KHANNA, SK .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4643-4648
[10]   EFFECTS OF DEPOSITION PARAMETERS ON THE PROPERTIES OF SUPERCONDUCTING RF REACTIVELY SPUTTERED NBN FILMS [J].
WOLF, SA ;
SINGER, IL ;
CUKAUSKAS, EJ ;
FRANCAVILLA, TL ;
SKELTON, EF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :411-414