EPITAXIAL-GROWTH OF GAAS IN CHLORIDE TRANSPORT-SYSTEMS

被引：15

作者：

HEYEN, M

BALK, P

机构：

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1983年 / 6卷 / 03期

关键词：

D O I：

10.1016/0146-3535(83)90043-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：265 / 303

页数：39

共 118 条

[1] TIN DIFFUSION FROM DOPED OXIDES FOR FABRICATING GAAS MICROWAVE DEVICES [J].

ARNOLD, N ;

DAEMBKES, H ;

HEIME, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :361-364

[2]

Ashen D.J., 1975, I PHYS C SER, V34, P229

[3] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[4] VAPOR-DEPOSITION OF SULFUR-DOPED GAAS LAYERS [J].

BACHEM, KH ;

BRUCH, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (07) :1000-1002

[5] VAPOR-PHASE GROWTH OF THIN GAAS MULTILAYER STRUCTURES [J].

BACHEM, KH ;

HEYEN, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) :147-148

[6]

BACHEM KH, 1973, 4 P INT C CHEM VAP D, P296

[7] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1) [J].

BAN, VS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1473-&

[8] VAPOR-PHASE GROWTH OF SEMICONDUCTING LAYERS [J].

BARRY, BE .

THIN SOLID FILMS, 1976, 39 (DEC) :35-53

[9] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J].

BASS, SJ .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :172-178

[10]

BLOEM J, 1978, CURRENT TOPICS MATER, V1, P147

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