RELATION BETWEEN THE TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY AND THERMAL-EQUILIBRIUM PROCESSES IN HYDROGENATED AMORPHOUS SI1-XNX

被引：4

作者：

BUDAGUAN, BG

AIVAZOV, AA

STANOVOV, ON

机构：

[1] The Institute of Electronic Engineering, Moscow

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1992年 / 66卷 / 03期

关键词：

D O I：

10.1080/13642819208207655

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties of amorphous silicon-nitrogen alloy films prepared by r.f. glow-discharge decomposition of silane-hydrogen-ammonia mixtures have been studied. Measurements of dark conductivity and photoconductivity against temperature from 300 to 550 K, and of the photoconductivity against intensity of the exciting light have been carried out. A correlation is found between the thermal equilibrium processes involving the structure and obtained from dark-conductivity measurements and the photoconductivity behaviour.

引用

页码：355 / 359

页数：5

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