DIRECT EVIDENCE FOR CO-AGGREGATION OF CARBON AND OXYGEN IN CZOCHRALSKI SILICON

被引：36

作者：

SHIMURA, F ^{[1
]}

HOCKETT, RS ^{[1
]}

REED, DA ^{[1
]}

WAYNE, DH ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.95985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：794 / 797

页数：4

共 13 条

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[9] QUANTITATIVE IMAGE ACQUISITION-SYSTEM FOR ION MICROSCOPY BASED ON THE RESISTIVE ANODE ENCODER [J].

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[10] INFRARED-ABSORPTION STUDY ON CARBON AND OXYGEN BEHAVIOR IN CZOCHRALSKI SILICON-CRYSTALS [J].

SHIMURA, F ;

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APPLIED PHYSICS LETTERS, 1985, 46 (10) :941-943

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