TRANSITION-METALS IN SILICON

[41] ELECTROLYSIS OF COPPER IN SOLID SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) : 82 - &

[42] QUENCHED-IN DEFECT IN BORON-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4821 - 4822

[43] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[44] Gosele U., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P55

[45] THE PROPERTIES OF IRON IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 669 - 674

[46] GRAFF K, 1981, SEMICONDUCTOR SILICO, P331

[47] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 341 - 376

[48] SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2553 - 2559

[49] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &

[50] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[41] ELECTROLYSIS OF COPPER IN SOLID SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) : 82 - &

[42] QUENCHED-IN DEFECT IN BORON-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4821 - 4822

[43] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[44] Gosele U., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P55

[45] THE PROPERTIES OF IRON IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 669 - 674

[46] GRAFF K, 1981, SEMICONDUCTOR SILICO, P331

[47] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 341 - 376

[48] SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2553 - 2559

[49] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &

[50] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700