LIGHT-INDUCED DEFECT DENSITIES IN HYDROGENATED AND DEUTERATED AMORPHOUS-SILICON DEPOSITED AT DIFFERENT SUBSTRATE TEMPERATURES

被引:12
作者
GANGULY, G
MATSUDA, A
机构
[1] Electrotechnical Laboratory, Tsukuba City, Ibaraki, 305
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 16期
关键词
D O I
10.1103/PhysRevB.49.10986
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The saturated metastable defect density under AM1 (100 mW cm-2) illumination as well as their formation and annealing kinetics have been studied in a large number of hydrogenated, and deuterated amorphous silicon films, prepared by plasma enhanced chemical-vapor deposition of silane at substrate temperatures of 250-degrees-C-450-degrees-C at different deposition rates, having low stable defect densities. The hydrogenated films exhibit a characteristic saturated defect density of (2-5) X 10(16) cm-3 independent of deposition conditions. There is no variation in the formation or annealing kinetics for samples with initial defect densities < 3 X 10(15) cm-3, but samples with higher initial defect densities have an order-of-magnitude longer time constants. On the other hand, there is a marked reduction of the saturated defect density in the deuterated films when the deposition temperature is increased even though the kinetics are similar to their hydrogenated counterparts. This shows that the saturated metastable defect density can be varied but is not a simple consequence of the average sample properties or the defect kinetics.
引用
收藏
页码:10986 / 10990
页数:5
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