ELECTRICAL QUALITY OF LOW-TEMPERATURE (TDEP-LESS-THAN-OR-EQUAL-TO-800-DEGREES-C) EPITAXIAL SILICON - THE EFFECT OF DEPOSITION TEMPERATURE

被引:10
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BURGER, WR
REIF, R
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10.1063/1.340248
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O59 [应用物理学];
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页码:368 / 382
页数:15
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