STRUCTURAL-PROPERTIES OF HG1-XZNX TE-CDTE STRAINED LAYER SUPERLATTICES AND THE REDUCTION OF THREADING DISLOCATIONS FROM A CDTE BUFFER LAYER

被引:8
作者
PETRUZZELLO, J [1 ]
OLEGO, D [1 ]
CHU, X [1 ]
FAURIE, JP [1 ]
机构
[1] UNIV ILLINOIS,CHICAGO,IL 60680
关键词
D O I
10.1063/1.344180
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2980 / 2983
页数:4
相关论文
共 13 条
[1]   DEVELOPMENTS AND TRENDS IN MBE OF II-VI HG-BASED COMPOUNDS [J].
FAURIE, JP .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :483-488
[2]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF A NOVEL STRAINED LAYER TYPE-III SUPERLATTICE SYSTEM - HGTE-ZNTE [J].
FAURIE, JP ;
SIVANANTHAN, S ;
CHU, X ;
WIJEWARNASURIYA, PA .
APPLIED PHYSICS LETTERS, 1986, 48 (12) :785-787
[3]   MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF HGCDTE, HGZNTE, AND HGMNTE ON GAAS(100) [J].
FAURIE, JP ;
RENO, J ;
SIVANANTHAN, S ;
SOU, IK ;
CHU, X ;
BOUKERCHE, M ;
WIJEWARNASURIYA, PS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2067-2071
[4]   CHARACTERIZATION STUDY OF A HGTE-CDTE SUPERLATTICE BY MEANS OF TRANSMISSION ELECTRON-MICROSCOPY AND INFRARED PHOTOLUMINESCENCE [J].
HARRIS, KA ;
HWANG, S ;
BLANKS, DK ;
COOK, JW ;
SCHETZINA, JF ;
OTSUKA, N ;
BAUKUS, JP ;
HUNTER, AT .
APPLIED PHYSICS LETTERS, 1986, 48 (06) :396-398
[5]  
MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[6]   ALMOST PERFECT EPITAXIAL MULTILAYERS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :989-991
[7]   CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].
PEOPLE, R ;
BEAN, JC .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324
[8]   TRANSMISSION ELECTRON-MICROSCOPY OF (001) CDTE ON (001) GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
PETRUZZELLO, J ;
OLEGO, D ;
GHANDHI, SK ;
TASKAR, NR ;
BHAT, I .
APPLIED PHYSICS LETTERS, 1987, 50 (20) :1423-1425
[9]   INTERFACE STRUCTURE IN HETEROEPITAXIAL CDTE ON GAAS(100) [J].
PONCE, FA ;
ANDERSON, GB ;
BALLINGALL, JM .
SURFACE SCIENCE, 1986, 168 (1-3) :564-570
[10]   GROWTH OF HG1-XZNXTE BY MOLECULAR-BEAM EPITAXY ON A GAAS (100) SUBSTRATE [J].
SIVANANTHAN, S ;
CHU, X ;
BOUKERCHE, M ;
FAURIE, JP .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1291-1293