MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF HGCDTE, HGZNTE, AND HGMNTE ON GAAS(100)

被引：26

作者：

FAURIE, JP

RENO, J

SIVANANTHAN, S

SOU, IK

CHU, X

BOUKERCHE, M

WIJEWARNASURIYA, PS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.574028

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2067 / 2071

页数：5

共 26 条

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APPLIED PHYSICS LETTERS, 1984, 44 (03) :313-315

[3] ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY PRODUCED HGCDTE LAYERS DOPED DURING GROWTH [J].

BOUKERCHE, M ;

WIJEWARNASURIYA, PS ;

RENO, J ;

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FAURIE, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2072-2076

[4] RECENT PROGRESS ON LADA GROWTH OF HGCDTE AND CDTE EPITAXIAL LAYERS [J].

CHEUNG, JT ;

MAGEE, T .

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[5] MBE GROWTH OF (HG, CD, AND TE) COMPOUNDS [J].

CHOW, PP ;

GREENLAW, DK ;

JOHNSON, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :562-563

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[7] MOLECULAR-BEAM EPITAXY OF ALLOYS AND SUPERLATTICES INVOLVING MERCURY [J].

FAURIE, JP ;

BOUKERCHE, M ;

RENO, J ;

SIVANANTHAN, S ;

HSU, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :55-59

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES [J].

FAURIE, JP ;

SIVANANTHAN, S ;

BOUKERCHE, M ;

RENO, J .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1307-1309

[9] LATEST DEVELOPMENTS IN THE GROWTH OF CDXHG1-XTE AND CDTE-HGTE SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY [J].

FAURIE, JP ;

MILLION, A ;

BOCH, R ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1593-1597

[10]

FAURIE JP, SURF SCI

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