MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF HGCDTE, HGZNTE, AND HGMNTE ON GAAS(100)

被引：26

作者：

FAURIE, JP

RENO, J

SIVANANTHAN, S

SOU, IK

CHU, X

BOUKERCHE, M

WIJEWARNASURIYA, PS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.574028

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2067 / 2071

页数：5

共 26 条

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[26]

TUNG T, 1985, 1985 US WORKSH PHYS

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