HOT FILAMENT ASSISTED DEPOSITION OF SILICON-NITRIDE THIN-FILMS

被引：22

作者：

DESHPANDE, SV

DUPUIE, JL

GULARI, E

机构：

[1] Department of Chemical Engineering, University of Michigan, Ann Arbor

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 12期

关键词：

D O I：

10.1063/1.107557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hot filament assisted chemical vapor deposition (HFCVD) of silicon nitride thin films was studied with disilane (Si2H6) and ammonia (NH3) as the source gases. High optical density films were obtained at a low substrate temperature (375-degrees-C) and high deposition rates (up to 1700 angstrom/min). The effects of disilane flow rate, filament temperature, and disilane carrier gas composition on film properties were investigated. Transmission infrared measurements showed low hydrogen content (< 5 %) in the films. Sputter depth profiling using x-ray photoelectron spectroscopy indicated high film purity with only surface oxygen contamination from air exposure after deposition.

引用

页码：1420 / 1422

页数：3

共 14 条

[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J].