MODULATED SEMICONDUCTOR STRUCTURES - AN OVERVIEW OF SOME BASIC CONSIDERATIONS FOR GROWTH AND DESIRED ELECTRONIC-STRUCTURE

被引：16

作者：

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 02期

关键词：

Compendex;

D O I：

10.1116/1.571349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTOR MATERIALS

引用

收藏

页码：149 / 161

页数：13

相关论文

共 47 条

[21] HETEROJUNCTION INTERFACES IN GE-GAAS
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[26] ELECTRON-PHONON COUPLING AND RESONANT MAGNETO-PHONON EFFECT IN OPTICAL BEHAVIOR OF 2-DIMENSIONALLY CONFINED CHARGE-CARRIERS
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[J]. SURFACE SCIENCE, 1980, 98 (1-3) : 135 - 142
[27] MADHUKAR A, UNPUB
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[30] TIGHT-BINDING STUDY OF ELECTRONIC-STRUCTURE OF INAS-GASB (001) SUPER-LATTICE
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