OPTICAL-PROPERTIES OF INAS QUANTUM-WELLS EMITTING BETWEEN 0.9 MU-M AND 2.5 MU-M

被引：5

作者：

TOURNIE, E

BRANDT, O

PLOOG, KH

机构：

[1] Max-Planck-Inst. fur Festkorperforschung, Stuttgart

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期

关键词：

D O I：

10.1088/0268-1242/8/1S/051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs/AlxGa0.48-xIn0.52As single and multiple quantum wells (QWS) grown on InP by modified solid source molecular beam epitaxy are investigated by photoluminescence (PL) spectroscopy. By adjusting the ow thickness between 2 and 16 monolayers (ML) and the barrier composition between Al0.48In0.52As and Ga0.47In0.53As, the PL emission can be tuned from 1.0 to 2.2 mum. The excitonic nature of the low-temperature recombinations and the observation of luminescence at room temperature demonstrate the high quality of our samples and the potential of the InAs/AlxGa0.48-xIn0.52As system for optoelectronic device applications.

引用

页码：S236 / S239

页数：4

共 20 条

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