PALLADIUM SILICIDE FORMATION UNDER THE INFLUENCE OF NITROGEN AND OXYGEN IMPURITIES

[11] Nicolet M.-A., 1983, MAT PROCESS CHARACTE, VVolume 6, P329

[12] DIFFUSION-BARRIERS IN LAYERED CONTACT STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 786 - 793

[13] MARKER STUDIES OF SILICIDE FORMATION, SILICON SELF-DIFFUSION AND SILICON EPITAXY USING RADIOACTIVE SILICON AND RUTHERFORD BACKSCATTERING [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 629 - 633

[14] THE EFFECTS OF INTERFACIAL SIO2 ON PD2SI FORMATION [J]. THIN SOLID FILMS, 1983, 104 (1-2) : 227 - 233

[15] THE EFFECTS OF IMPLANTED OXYGEN ON PD2SI FORMATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 297 - 301

[16] SCOTT DM, 1982, THESIS CALTECH

[17] TU KN, 1978, THIN FILMS INTERDIFF, pCH10

[18] TU KN, 1981, J VAC SCI TECHNOL, V19, P760

[19] VLSI METALLIZATION - SOME PROBLEMS AND TRENDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 761 - 765

[20] WEAST RC, 1969, HDB CHEM PHYSICS, pD67

[11] Nicolet M.-A., 1983, MAT PROCESS CHARACTE, VVolume 6, P329

[12] DIFFUSION-BARRIERS IN LAYERED CONTACT STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 786 - 793

[13] MARKER STUDIES OF SILICIDE FORMATION, SILICON SELF-DIFFUSION AND SILICON EPITAXY USING RADIOACTIVE SILICON AND RUTHERFORD BACKSCATTERING [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 629 - 633

[14] THE EFFECTS OF INTERFACIAL SIO2 ON PD2SI FORMATION [J]. THIN SOLID FILMS, 1983, 104 (1-2) : 227 - 233

[15] THE EFFECTS OF IMPLANTED OXYGEN ON PD2SI FORMATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 297 - 301

[16] SCOTT DM, 1982, THESIS CALTECH

[17] TU KN, 1978, THIN FILMS INTERDIFF, pCH10

[18] TU KN, 1981, J VAC SCI TECHNOL, V19, P760

[19] VLSI METALLIZATION - SOME PROBLEMS AND TRENDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 761 - 765

[20] WEAST RC, 1969, HDB CHEM PHYSICS, pD67