THE EFFECTS OF IMPLANTED OXYGEN ON PD2SI FORMATION

被引：8

作者：

SCOTT, DM ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90814-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：297 / 301

页数：5

共 18 条

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[2] EFFECT OF OXIDIZING AMBIENTS ON PLATINUM SILICIDE FORMATION .2. AUGER AND BACKSCATTERING ANALYSES
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EVANS, CA
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ULLRICH, BM
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[4] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION
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[5] CRIDER CA, 1980, ELECTROCHEM SOC P, V80, P135
[6] FOLL H, 1981, J APPL PHYS, V52, P5510, DOI 10.1063/1.329533
[7] GIBBONS JF, 1975, PROJECTED RANGE STAT
[8] THE EFFECT OF NITROGEN AT THE PT-SI INTERFACE ON THE GROWTH OF PLATINUM SILICIDES
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[J]. THIN SOLID FILMS, 1981, 79 (03) : 235 - 249
[9] CROSS SECTIONS FOR O16(D,P0)O17,O16)D,P1)O17 + O16)D,ALPHA0)N14 REACTIONS FROM 0.8 TO 1.7 MEV
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[10] LAU SS, 1978, THIN FILMS INTERDIFF, P450