DEEP-UV CHEMICALLY AMPLIFIED DISSOLUTION-INHIBITED PHOTORESISTS

被引：18

作者：

CRIVELLO, JV ^{[1
]}

SHIM, SY ^{[1
]}

SMITH, BW ^{[1
]}

机构：

[1] ROCHESTER INST TECHNOL,DEPT MICROELECTR ENGN,ROCHESTER,NY 14623

来源：

CHEMISTRY OF MATERIALS | 1994年 / 6卷 / 11期

关键词：

D O I：

10.1021/cm00047a043

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A novel deep-UV photoresist has been developed with good sensitivity, resolution, and contrast. These characteristics were obtained using poly(4-hydroxystyrene-co-styrene) copolymers as the base resin together with tert-butyl cholate as a deblockable dissolution inhibitor. A triarylsulfonium salt photoacid generator was used in the photoresist to supply the strong acid required to deblock the dissolution inhibitor. The photoresist was imaged at 248 nm using an excimer laser stepper.

引用

页码：2167 / 2171

页数：5

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