INDIUM TIN OXIDE ON INP BY PULSED-LASER DEPOSITION

被引：10

作者：

JIA, QX

ZHENG, JP

KWOK, HS

ANDERSON, WA

机构：

[1] USA,ELECTR & POWER SOURCES DIRECTORATE,FT MONMOUTH,NJ 07703

[2] SUNY BUFFALO,DEPT ELECT & COMP ENGN,BUFFALO,NY 14260

来源：

THIN SOLID FILMS | 1995年 / 258卷 / 1-2期

关键词：

ELECTRICAL PROPERTIES AND MEASUREMENTS; INDIUM PHOSPHIDE; LASER ABLATION; PHOTOVOLTAGE;

D O I：

10.1016/0040-6090(94)06362-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) films with a resistivity of the order of 6 x 10(-4) Omega cm were deposited at room temperature on InP by pulsed laser ablation. The resistivity of the films was further reduced to less than 2 x 10(-4) Omega cm if the deposition was done at a substrate temperature of 310 degrees C. The enhanced blue response of the photovoltaic device of ITO/InP deposited at room temperature indicated improved collection efficiency near the ITO-InP interface. The dark current-voltage measurements indicated higher excess current at lower bias for the devices fabricated at 310 degrees C.

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收藏

页码：260 / 263

页数：4

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