SUB-HALF-MICRON CRITICAL DIMENSION CONTROL IN X-RAY-LITHOGRAPHY MASK TECHNOLOGY

被引：8

作者：

HUBER, HL

PONGRATZ, S

TRUBE, J

WINDBRACKE, W

MESCHEDER, U

MUND, F

机构：

[1] PHILIPS GMBH FORSCHUNGSLAB,HAMBURG,FED REP GER

[2] PHILIPS GMBH,VALVO RHW,HAMBURG,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2184 / 2189

页数：6

共 15 条

[1] FABRICATION BY TRI-LEVEL ELECTRON BEAM LITHOGRAPHY OF X-RAY MASKS WITH 50nm LINEWIDTHS, AND REPLICATION BY X-RAY NANOLITHOGRAPHY. [J].

Anderson, Erik H. ;

Kern, D.P. ;

Smith, Henry I. .

Microelectronic Engineering, 1987, 6 (1-4) :541-546

[2]

BENNETT SD, 1988, SPIE, V921, P85

[3] MICROMECHANICS: A SILICON MICROFABRICATION TECHNOLOGY. [J].

Csepregi, L. .

Microelectronic Engineering, 1985, 3 (1-4) :221-234

[4] ACCURATE IMAGE MODELING FOR SUBMICRON CD OPTICAL CONTROL. [J].

Guillaume, M.E. ;

Livrozet, P. ;

Buevoz, J.L. ;

Alcouffe-Noailly, N. .

Microelectronic Engineering, 1987, 6 (1-4) :631-636

[5] X-RAY-LITHOGRAPHY [J].

HEUBERGER, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :107-121

[6] LINEWIDTH METROLOGY FOR X-RAY MASKS WITH SUBHALFMICRON FEATURE SIZE. [J].

Mescheder, U. ;

Mund, F. ;

Huber, H.-L. .

Microelectronic Engineering, 1987, 6 (1-4) :653-659

[7]

MESCHEDER U, 1986, MICROELECTRON ENG, V5, P41

[8]

Pilz W., 1985, Microelectronic Engineering, V3, P467, DOI 10.1016/0167-9317(85)90058-9

[9] HIGH RESOLUTION e-BEAM LITHOGRAPHY FOR X-RAY MASK MAKING. [J].

Pongratz, S. ;

Reimer, K. ;

Demmeler, R. ;

Ehrlich, Ch. .

Microelectronic Engineering, 1987, 6 (1-4) :123-128

[10]

REIMER L, 1968, OPTIK, V27, P86

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