ELECTRICAL CHARACTERISTICS OF AMORPHOUS MOLYBDENUM-NICKEL CONTACTS TO SILICON

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[3] DOYLE BL, 1983, MATER RES SOC S P, V18, P69

[4] EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 87 - 89

[5] FINITE METAL-SHEET-RESISTANCE IN CONTACT RESISTIVITY MEASUREMENTS - APPLICATION TO SI/TIN CONTACTS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (11) : 1065 - 1067

[6] ALUMINUM-SILICON OHMIC CONTACT ON SHALLOW N+-P JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (03) : 255 - &

[7] CONTACT RESISTIVITY OF TIN ON P+-SI AND N+-SI [J]. SOLAR CELLS, 1983, 9 (03): : 179 - 183

[8] ELECTRICAL CHARACTERISTICS OF AMORPHOUS IRON-TUNGSTEN CONTACTS ON SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 987 - 989

[9] Gupta D., 1978, Thin films. Interdiffusion and reactions, P161

[10] ION-INDUCED STRUCTURE MODIFICATION OF THIN MOLYBDENUM-NICKEL FILMS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 243 - 247

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[3] DOYLE BL, 1983, MATER RES SOC S P, V18, P69

[4] EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 87 - 89

[5] FINITE METAL-SHEET-RESISTANCE IN CONTACT RESISTIVITY MEASUREMENTS - APPLICATION TO SI/TIN CONTACTS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (11) : 1065 - 1067

[6] ALUMINUM-SILICON OHMIC CONTACT ON SHALLOW N+-P JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (03) : 255 - &

[7] CONTACT RESISTIVITY OF TIN ON P+-SI AND N+-SI [J]. SOLAR CELLS, 1983, 9 (03): : 179 - 183

[8] ELECTRICAL CHARACTERISTICS OF AMORPHOUS IRON-TUNGSTEN CONTACTS ON SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 987 - 989

[9] Gupta D., 1978, Thin films. Interdiffusion and reactions, P161

[10] ION-INDUCED STRUCTURE MODIFICATION OF THIN MOLYBDENUM-NICKEL FILMS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 243 - 247