A DYNAMIC RAM CELL IN RECRYSTALLIZED POLYSILICON

被引：5

作者：

JOLLY, RD ^{[1
]}

KAMINS, TI ^{[1
]}

MCCHARLES, RH ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 01期

关键词：

D O I：

10.1109/EDL.1983.25626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：8 / 11

页数：4

共 7 条

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[4] MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON [J].

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SARASWAT, KC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :290-293

[5]

LAM HW, 1982, IEEE T ELECTRON DEV, V29, P389, DOI 10.1109/T-ED.1982.20713

[6] ALPHA-PARTICLE-INDUCED SOFT ERRORS IN DYNAMIC MEMORIES [J].

MAY, TC ;

WOODS, MH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (01) :2-9

[7] LASER-INDUCED LATERAL EPITAXIAL-GROWTH OF SILICON OVER SILICON DIOXIDE WITH LOCALLY VARIED ENCAPSULATION [J].

SAKURAI, J ;

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NAKANO, M ;

TAKAGI, M .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :64-67

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