REACTIVELY SPUTTERED INDIUM OXIDE DIFFUSION BARRIER

被引：8

作者：

KOLAWA, E

NIEH, CW

MOLARIUS, JM

TRAN, L

GARLAND, C

FLICK, W

NICOLET, MA

SO, FCT

WEI, JCS

机构：

[1] HEWLETT PACKARD,DIV OPTOELECTR,SAN JOSE,CA 95131

[2] INTEL CORP,SANTA CLARA,CA 95051

来源：

THIN SOLID FILMS | 1988年 / 166卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(88)90361-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：15 / 20

页数：6

共 21 条

[1]

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[4]

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[8] DIFFUSION-BARRIERS IN LAYERED CONTACT STRUCTURES [J].

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[10] MICROSTRUCTURE OF RUO2 LAYER AS DIFFUSION BARRIER BETWEEN AL AND SI SUBSTRATE [J].

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