THEORY OF CARRIER MULTIPLICATION FACTORS IN PRESENCE OF TRAPPING

被引:8
作者
LANDSBERG, PT [1 ]
ROBBINS, DJ [1 ]
机构
[1] UNIV SOUTHAMPTON,DEPT MATH,SOUTHAMPTON,ENGLAND
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1975年 / 8卷 / 22期
关键词
D O I
10.1088/0022-3719/8/22/022
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:3825 / 3832
页数:8
相关论文
共 12 条
[1]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[2]  
BULUCEA CD, 1973, IEEE T ELECTRON DEV, VED20, P692, DOI 10.1109/T-ED.1973.17730
[3]  
HAITZ RH, 1965, PHYS REV A, V138, P260
[4]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+
[5]   IMPACT IONIZATION INVESTIGATIONS ON ZNSE SCHOTTKY-BARRIER DIODES [J].
MACH, R ;
LUDWIG, W .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 23 (02) :507-516
[6]   MULTIPLICATION IN SILICON P-N JUNCTIONS [J].
MOLL, JL .
PHYSICAL REVIEW, 1965, 137 (3A) :A938-&
[7]   INVESTIGATION INTO BEHAVIOR OF TRAPPING CENTERS IN MICROPLASMAS [J].
NUTTALL, KI ;
NIELD, MW .
SOLID-STATE ELECTRONICS, 1975, 18 (01) :13-23
[9]   AVALANCHE IONIZATION RATES MEASURED IN SILICON AND GERMANIUM AT LOW ELECTRIC FIELDS [J].
SAYLE, WE ;
LAURITZEN, PO .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (01) :58-+
[10]   UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS [J].
STILLMAN, GE ;
WOLFE, CM ;
ROSSI, JA ;
FOYT, AG .
APPLIED PHYSICS LETTERS, 1974, 24 (10) :471-474