QUASISATURATION EFFECT IN HIGH-VOLTAGE VDMOS TRANSISTORS

被引:16
作者
SANCHEZ, JL
GHARBI, M
TRANDUC, H
ROSSEL, P
机构
来源
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1985年 / 132卷 / 01期
关键词
D O I
10.1049/ip-i-1.1985.0010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:42 / 45
页数:4
相关论文
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