MODEL FOR PHOTO-INDUCED LONG-TERM DRAIN CURRENT TRANSIENTS IN GAAS-MESFETS

被引：1

作者：

GEORGE, P

KO, PK

HU, CM

机构：

[1] ERL and EECS, University of California at Berkeley, Berkeley, CA

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1990年 / 68卷 / 05期

关键词：

D O I：

10.1080/00207219008921214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple model is presented for the negative drain current transients observed in GaAs MESFETs when subjected to ionizing radiation. The two dominant mechanisms are proposed to be electron trapping under the Schottky gate and in the neutral semi-insulating substrate. The model is suitable for the design and evaluation of radiation-resistant GaAs MESFET integrated circuits using common electrical simulators such as SPICE3. © 1990 Taylor and Francis Ltd.

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页码：721 / 728

页数：8

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