EFFECTS OF INSULATED GATE ON ION-IMPLANTED INSB P+N JUNCTIONS

被引：12

作者：

FUJISADA, H ^{[1
]}

SASASE, T ^{[1
]}

机构：

[1] HAMAMATSU PHOTON KK, HAMAMATSU 435, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1984年 / 23卷 / 03期

关键词：

D O I：

10.1143/JJAP.23.L162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L162 / L164

页数：3

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