ELECTRICAL-PROPERTIES OF MO-CADMIUM CHALCOGENIDE SCHOTTKY-BARRIER DIODES

被引：8

作者：

BIKBAEV, VB ^{[1
]}

KARPINSKAS, SC ^{[1
]}

VAITKUS, JJ ^{[1
]}

机构：

[1] VILNIUS CIVIL ENGN INST,VILNIUS 232054,LISSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 75卷 / 02期

关键词：

D O I：

10.1002/pssa.2210750231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：583 / 590

页数：8

共 17 条

[1]

AKRAMOV HT, 1973, HELIOTECH, V2, P2

[2] ANISOTROPIC SURFACE BARRIERS ON CDSE [J].

CONSIGNY, RL ;

MADIGAN, JR .

SOLID STATE COMMUNICATIONS, 1969, 7 (01) :189-&

[3] MODELING ELECTRICAL BEHAVIOR OF NONUNIFORM AL-SI SCHOTTKY DIODES [J].

DASCALU, D ;

BREZEANU, G ;

DAN, PA ;

DIMA, C .

SOLID-STATE ELECTRONICS, 1981, 24 (10) :897-904

[4] METAL CONTACTS TO CLEAN AND OXIDIZED CADMIUM TELLURIDE AND INDIUM-PHOSPHIDE SURFACES [J].

HUMPHREYS, TP ;

PATTERSON, MH ;

WILLIAMS, RH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :886-890

[5]

KARPINSKAS SC, 1978, FIZ TEKH POLUPROV, V12, P1555

[6] SOME INVESTIGATIONS ON EVAPORATED AU-CDS-TYPE METAL-SEMICONDUCTOR BARRIERS [J].

KOHLER, R ;

WAUER, L .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :581-&

[7] CORRELATION BETWEEN OPEN-CIRCUIT VOLTAGE AND INTERFACE PARAMETERS AT AU-CDS ILLUMINATED CONTACT [J].

LEPLEY, B ;

RAVELET, S .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (02) :517-523

[8] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J].

MEAD, CA ;

SPITZER, WG .

PHYSICAL REVIEW, 1964, 134 (3A) :A713-+

[9]

Newman P. C., 1965, ELECTRON LETT, V1, P265

[10] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].

PADOVANI, FA ;

STRATTON, R .

SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&

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