MODELING ELECTRICAL BEHAVIOR OF NONUNIFORM AL-SI SCHOTTKY DIODES

被引：22

作者：

DASCALU, D ^{[1
]}

BREZEANU, G ^{[1
]}

DAN, PA ^{[1
]}

DIMA, C ^{[1
]}

机构：

[1] IPRS BANEASA,BUCHAREST,ROMANIA

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 10期

关键词：

D O I：

10.1016/0038-1101(81)90109-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：897 / 904

页数：8

共 22 条

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[7] ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS [J].

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[8]

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[9] BEHAVIOR OF AL-SI SCHOTTKY-BARRIER DIODES UNDER HEAT-TREATMENT [J].

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[10] MATERIAL REACTIONS AND BARRIER HEIGHT VARIATIONS IN SINTERED AL-INP SCHOTTKY DIODES [J].

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