STRUCTURAL-PROPERTIES OF TITANIUM-DIOXIDE FILMS DEPOSITED IN AN RF GLOW-DISCHARGE

被引:165
作者
WILLIAMS, LM
HESS, DW
机构
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 04期
关键词
D O I
10.1116/1.572220
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1810 / 1819
页数:10
相关论文
共 24 条
[1]  
ALEXANDER JH, 1970, THIN FILM DIELECTRIC, P186
[2]   C-V CHARACTERISTICS OF METAL-TITANIUM DIOXIDE-SILICON CAPACITORS [J].
BROWN, WD ;
GRANNEMANN, WW .
SOLID-STATE ELECTRONICS, 1978, 21 (06) :837-846
[3]  
BUTLER MA, 1980, J MATER SCI, V15, P19
[4]  
Clark R.J.H., 1968, CHEM TITANIUM VANADI, P266
[5]  
ECKERTOVA L, 1977, PHYS THIN FILMS, pCH4
[6]   TIO2 FILM PROPERTIES AS A FUNCTION OF PROCESSING TEMPERATURE [J].
FITZGIBBONS, ET ;
SLADEK, KJ ;
HARTWIG, WH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :735-+
[7]   KINETICS OF REACTIVE SPUTTER DEPOSITION OF TITANIUM OXIDES [J].
GERAGHTY, KG ;
DONAGHEY, LF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) :1201-1207
[8]   GROWTH CHARACTERISTICS OF RUTILE FILM BY CHEMICAL VAPOR DEPOSITION [J].
GHOSHTAGORE, RN ;
NOREIKA, AJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1310-+
[9]   ION SURFACE INTERACTIONS DURING VAPOR-PHASE CRYSTAL-GROWTH BY SPUTTERING, MBE, AND PLASMA-ENHANCED CVD - APPLICATIONS TO SEMICONDUCTORS [J].
GREENE, JE ;
BARNETT, SA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :285-302
[10]  
HAAS G, 1952, VACUUM, V2, P331