SELECTIVE-AREA GROWTH OF III/V SEMICONDUCTORS IN CHEMICAL BEAM EPITAXY

This review describes progress in selective-area epitaxy (SAE) using masked wafers in chemical beam epitaxy (CBE). Surface-selective growth is discussed, leading to a better understanding of the growth phenomena taking place in the transition areas from growth to non-growth where crystal facets are formed. On the basis of this knowledge it is demonstrated that unique structures with uniform layer thickness and material compositions can be obtained, which are not dependent on the aspect ratio of the masked area. This enables the device designer to produce a flexible mask layout which is not limited by the growth mechanism. Finally our current knowledge about SAE of device structures grown by CBE/MOMBE is reviewed.