PRECIPITATION OF OXYGEN IN SINGLE-CRYSTAL SILICON IMPLANTED WITH HIGH-DOSES OF OXYGEN

被引：7

作者：

HEMMENT, PLF

MAYDELLONDRUSZ, EA

CASTLE, JE

PAYNTER, R

WILSON, MC

BOOKER, RG

KILNER, JA

ARROWSMITH, RP

机构：

[1] UNIV SURREY,DEPT MET & MAT TECHNOL,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND

[3] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,ROYAL SCH MINES,LONDON SW7 2AZ,ENGLAND

[4] BRITISH TELECOM,RES LABS,IPSWICH,SUFFOLK,ENGLAND

来源：

THIN SOLID FILMS | 1985年 / 128卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(85)90340-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：125 / 131

页数：7

共 17 条

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TUPPEN CG, 1983, OCT FALL M EL SOC WA

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TUPPEN CG, 1984, APPL PHYS LETT, V45, P58

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