FOCUSED ION-BEAM GALLIUM IMPLANTATION INTO SILICON

被引：29

作者：

TAMURA, M ^{[1
]}

SHUKURI, S ^{[1
]}

MONIWA, M ^{[1
]}

DEFAULT, M ^{[1
]}

机构：

[1] ECOLE SUPER PHYS & CHIM IND,F-75005 PARIS,FRANCE

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 39卷 / 03期

关键词：

D O I：

10.1007/BF00620733

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：183 / 190

页数：8

共 15 条

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[8] FURNACE ANNEALING BEHAVIOR OF PHOSPHORUS IMPLANTED, LASER ANNEALED SILICON [J].

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[9]

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[10] SUB-MICRON CHANNEL MOSFET USING FOCUSED BORON ION-BEAM IMPLANTATION INTO SILICON [J].

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