COMPARISON OF THIN-FILM TRANSISTORS FABRICATED AT LOW-TEMPERATURES (LESS-THAN-OR-EQUAL-TO 600-DEGREES-C) ON AS-DEPOSITED AND AMORPHIZED-CRYSTALLIZED POLYCRYSTALLINE SI

被引：18

作者：

KUNG, KTY

REIF, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.338949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1638 / 1642

页数：5

相关论文

共 12 条

[1] 6X6 INCH 20 LINES-PER-INCH LIQUID-CRYSTAL DISPLAY PANEL
BRODY, TP
ASARS, JA
DIXON, GD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (11) : 995 - 1001
[2] STOCHASTIC-MODEL FOR GRAIN-SIZE VERSUS DOSE IN IMPLANTED AND ANNEALED POLYCRYSTALLINE SILICON FILMS ON SIO2
IVERSON, RB
REIF, R
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5169 - 5175
[3] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
KAMINS, TI
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &
[4] IMPLANT-DOSE DEPENDENCE OF GRAIN-SIZE AND (110) TEXTURE ENHANCEMENTS IN POLYCRYSTALLINE SI FILMS BY SEED SELECTION THROUGH ION CHANNELING
KUNG, KTY
REIF, R
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) : 2422 - 2428
[5] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON
MANDURAH, MM
SARASWAT, KC
HELMS, CR
KAMINS, TI
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763
[6] LOW-TEMPERATURE POLYSILICON SUPER-THIN-FILM TRANSISTOR (LSFT)
NOGUCHI, T
HAYASHI, H
OHSHIMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L121 - L123
[7] A SUPER THIN-FILM TRANSISTOR IN ADVANCED POLY SI FILMS
OHSHIMA, T
NOGUCHI, T
HAYASHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04): : L291 - L293
[8] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
SETO, JYW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5247 - 5254
[9] Sze S. M., 1981, PHYSICS SEMICONDUCTO
[10] 1984, MATERIAL RES SOC S P, V33