BORON REDISTRIBUTION IN DOPING SUPERLATTICES GROWN BY SILICON MOLECULAR-BEAM EPITAXY USING B2O3

被引：16

作者：

JACKMAN, TE

HOUGHTON, DC

DENHOFF, MW

SONG, KC

MCCAFFREY, J

JACKMAN, JA

TUPPEN, CG

机构：

[1] CANADA CTR MINERAL & ENERGY TECHNOL,DEPT ENERGY MINES & RESOURCES,OTTAWA K1A OG1,ONTARIO,CANADA

[2] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

关键词：

D O I：

10.1063/1.100101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：877 / 879

页数：3

共 16 条

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GREENE, JE
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[J]. APPLIED PHYSICS LETTERS, 1988, 53 (01) : 48 - 50
[5] BORON-OXIDE INTERACTION WITH SILICON IN SILICON MOLECULAR-BEAM EPITAXY
DEFRESART, E
RHEE, SS
WANG, KL
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 847 - 849
[6] DOHLER GH, 1986, CRC CRIT R SOLID ST, V13, P196
[7] CHARACTERIZATION OF MBE GROWN SI/GEXSI1-X STRAINED LAYER SUPERLATTICES
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LOCKWOOD, DJ
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FENTON, EW
BARIBEAU, JM
DENHOFF, MW
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 434 - 439
[8] JACKMAN JA, 1988, IN PRESS 6TH P INT C
[9] JACKMAN TE, UNPUB
[10] A SOLUTION TO BORON CONTAMINATION AT THE SUBSTRATE EPILAYER INTERFACE OF SILICON GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 1905 - 1907