INCREASED OXYGEN PRECIPITATION IN CZ SILICON-WAFERS COVERED BY POLYSILICON

被引：10

作者：

ARST, MC

DEGROOT, JG

机构：

来源：

关键词：

D O I：

10.1007/BF02657925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：763 / 778

页数：16

共 14 条

[1]

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[2]

CRAVEN RA, 1981, SEMICONDUCTOR SILICO, P254

[3] PRECIPITATION OF OXYGEN IN SILICON [J].

FREELAND, PE ;

JACKSON, KA ;

LOWE, CW ;

PATEL, JR .

HU, SM .

[5]

HUFF HR, 1981, SEMICONDUCTOR SILICO, P189

[6]

INOUE N, 1981, SEMICONDUCTOR SILICO, P282

[7]

INOUE N, 1979, EL SOC M ABS, V792, P1358

MATSUSHITA, Y .

[9] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].

MIKKELSEN, JC .

[10]

MIKKELSEN JC, 1982, APPL PHYS LETT, V42, P695