OPTICAL SPECTROSCOPY OF ORDERED GAAS(001) SURFACES OBTAINED BY SULFIDE PASSIVATION

被引：12

作者：

BERKOVITS, VL ^{[1
]}

PAGET, D ^{[1
]}

机构：

[1] A F IOFFE PHYSICOTECH INST,ST PETERSBURG 194021,RUSSIA

来源：

APPLIED SURFACE SCIENCE | 1993年 / 65-6卷

关键词：

D O I：

10.1016/0169-4332(93)90727-S

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Reflectance anisotropy (RA) spectroscopy has been used to study at 300 K the intrinsic optical transitions on (Na2S . 9H2O) and (NH4)2S-treated GaAs(001) surfaces and for unpassivated surfaces. As a function of annealing temperature, we observe arsenic and sulfur dimers oriented along the [110BAR] direction as well as gallium dimers oriented along [110]. The differences as a function of surface treatments are related to the chemistry of the passivated surfaces and to the amount of residual impurities. We obtain surface structures with a reduced band bending, stable down to 120 K and consistent with known arsenic-rich and gallium-rich reconstructions.

引用

页码：607 / 613

页数：7

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