共 497 条
- [1] ION-BOMBARDMENT OF RESISTS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 79 - 86
- [2] APPLICATION OF LOW-ANGLE RUTHERFORD BACKSCATTERING AND CHANNELING TECHNIQUES TO DETERMINE IMPLANTATION INDUCED DISORDER PROFILE DISTRIBUTIONS IN SEMICONDUCTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 283 - 288
- [3] EFFECT OF ION-IMPLANTATION ON THE OXYGEN OVERPOTENTIAL OF NI ANODES [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 985 - 990
- [4] MICROSTRUCTURAL STUDY OF SOME AMORPHOUS TRANSITION METAL-METALLOID SURFACE ALLOYS FORMED BY ION-IMPLANTATION [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 353 - 376
- [5] AMORPHOUS NI-P ALLOYS PREPARED BY ION-IMPLANTATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 34 (04): : 251 - 254
- [6] CHANNELING AND TEM STUDIES ON SB+ IMPLANTED NI [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 363 - 369
- [7] Andersen H. H., 1984, Ion implantation and beam processing, P127
- [8] Andersen H. H., 1973, Radiation Effects, V19, P139, DOI 10.1080/00337577308232233
- [10] ANDERSEN HH, 1980, 1980 S PHYS ION GAS, P241