ENHANCED COMPOSITIONAL DISORDERING OF QUANTUM-WELLS IN GAAS/ALGAAS AND INGAAS/GAAS USING FOCUSED GA+ ION-BEAMS

被引：17

作者：

PIVA, PG ^{[1
]}

POOLE, PJ ^{[1
]}

BUCHANAN, M ^{[1
]}

CHAMPION, G ^{[1
]}

TEMPLETON, I ^{[1
]}

AERS, GC ^{[1
]}

WILLIAMS, R ^{[1
]}

WASILEWSKI, ZR ^{[1
]}

KOTELES, ES ^{[1
]}

CHARBONNEAU, S ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.112983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spatially selective compositional disordering induced by focused Ga+ ion beam implantation in GaAs/AlGaAs and strained InGaAs/GaAs quantum well structures has been studied using photoluminescence. We find that beyond a certain implantation dosage, the degree of intermixing imparted to a given quantum well saturates and may eventually decline as a result of damage to the semiconductor surface. We overcome this limitation by thermally annealing the sample after implantation to repair the crystalline surface. We show that multiple successive implants interspersed with rapid thermal anneals (RTAs) are successful in locally shifting the optical band gap of quantum wells by many times that attributed to a single implant and RTA.

引用

页码：621 / 623

页数：3

共 8 条

[1] FABRICATION OF NANOSTRUCTURES IN STRAINED INGAAS/GAAS QUANTUM-WELLS BY FOCUSED-ION-BEAM IMPLANTATION [J].

ALLARD, LB ;

AERS, GC ;

CHARBONNEAU, S ;

JACKMAN, TE ;

WILLIAMS, RL ;

TEMPLETON, IM ;

BUCHANAN, M ;

STEVANOVIC, D ;

ALMEIDA, FJD .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) :422-428

[2] METAL-SEMICONDUCTOR-METAL DEMULTIPLEXING WAVE-GUIDE PHOTODETECTORS IN INGAAS/GAAS QUANTUM-WELL STRUCTURES BY SELECTIVE BANDGAP TUNING [J].

CHOUDHURY, ANMM ;

MELMAN, P ;

SILLETTI, A ;

KOTELES, ES ;

FOLEY, B ;

ELMAN, B .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (09) :817-820

[3] EFFECT OF HEAT-TREATMENT ON INGAAS/GAAS QUANTUM-WELLS [J].

ELMAN, B ;

KOTELES, ES ;

MELMAN, P ;

JAGANNATH, C ;

ARMIENTO, CA ;

ROTHMAN, M .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) :1351-1353

[4] FABRICATION OF A GAAS QUANTUM-WELL-WIRE STRUCTURE BY GA FOCUSED-ION-BEAM IMPLANTATION AND ITS OPTICAL-PROPERTIES [J].

HIRAYAMA, Y ;

TARUCHA, S ;

SUZUKI, Y ;

OKAMOTO, H .

PHYSICAL REVIEW B, 1988, 37 (05) :2774-2777

[5]

JACKMAN TE, 1991, APPL PHYS LETT, V59, P27

[6]

KOTELES ES, 1992, MATER RES SOC SYMP P, V240, P171

[7] OPTICAL STUDY OF GAAS GAALAS QUANTUM STRUCTURES PROCESSED BY HIGH-ENERGY FOCUSED ION-BEAM IMPLANTATION [J].

LARUELLE, F ;

HU, YP ;

SIMES, R ;

ROBINSON, W ;

MERZ, J ;

PETROFF, PM .

SURFACE SCIENCE, 1990, 228 (1-3) :306-309

[8] IMPLANTATION ENHANCED INTERDIFFUSION IN GAAS/GAALAS QUANTUM STRUCTURES [J].

LARUELLE, F ;

HU, P ;

SIMES, R ;

KUBENA, R ;

ROBINSON, W ;

MERZ, J ;

PETROFF, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :2034-2038

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