DEVICE MODELING

[31] SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 254 - 262

[32] Engl W. L., 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-1, P85, DOI 10.1109/TCAD.1982.1269998

[33] Engl W. L., 1977, Proceedings of the NATO Advanced Study Institute on Process and Device Modelling for Integrated Circuit Design, P377

[34] ENGL WL, 1979, NUMERICAL ANAL SEMIC

[35] ENGL WL, 1981, NUMERICAL ANAL SEMIC

[36] A PHYSICAL MODEL FOR THE DEPENDENCE OF CARRIER LIFETIME ON DOPING DENSITY IN NONDEGENERATE SILICON [J]. SOLID-STATE ELECTRONICS, 1982, 25 (08) : 741 - 747

[37] ON EFFECT OF MOBILITY VARIATION ON MOS DEVICE CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (02): : 217 - &

[38] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 108 - +

[39] COMPUTER-AIDED DESIGN AND CHARACTERIZATION OF DIGITAL MOS INTEGRATED CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (02) : 57 - &

[40] FUKUMA M, 1978, IECE JAPAN SSD, V78, P6

[31] SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 254 - 262

[32] Engl W. L., 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-1, P85, DOI 10.1109/TCAD.1982.1269998

[33] Engl W. L., 1977, Proceedings of the NATO Advanced Study Institute on Process and Device Modelling for Integrated Circuit Design, P377

[34] ENGL WL, 1979, NUMERICAL ANAL SEMIC

[35] ENGL WL, 1981, NUMERICAL ANAL SEMIC

[36] A PHYSICAL MODEL FOR THE DEPENDENCE OF CARRIER LIFETIME ON DOPING DENSITY IN NONDEGENERATE SILICON [J]. SOLID-STATE ELECTRONICS, 1982, 25 (08) : 741 - 747

[37] ON EFFECT OF MOBILITY VARIATION ON MOS DEVICE CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (02): : 217 - &

[38] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 108 - +

[39] COMPUTER-AIDED DESIGN AND CHARACTERIZATION OF DIGITAL MOS INTEGRATED CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (02) : 57 - &

[40] FUKUMA M, 1978, IECE JAPAN SSD, V78, P6