DEVICE MODELING

[91] EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (04) : 393 - +

[92] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[93] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 64 - +

[94] SCHARFETTER DL, 1967, SOLID STATE DEVICES

[95] A TWO-DIMENSIONAL MODEL OF THE AVALANCHE EFFECT IN MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1982, 25 (03) : 177 - 183

[96] SCHUTZ A, 1982, THESIS TU WIEN WIEN

[97] MINIMOS - A TWO-DIMENSIONAL MOS-TRANSISTOR ANALYZER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1540 - 1550

[98] SELBERHERR S, 1979, NUMERICAL ANAL SEMIC

[99] SELLONI A, 1982, PHYS REV LETT 1015

[100] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[91] EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (04) : 393 - +

[92] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[93] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 64 - +

[94] SCHARFETTER DL, 1967, SOLID STATE DEVICES

[95] A TWO-DIMENSIONAL MODEL OF THE AVALANCHE EFFECT IN MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1982, 25 (03) : 177 - 183

[96] SCHUTZ A, 1982, THESIS TU WIEN WIEN

[97] MINIMOS - A TWO-DIMENSIONAL MOS-TRANSISTOR ANALYZER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1540 - 1550

[98] SELBERHERR S, 1979, NUMERICAL ANAL SEMIC

[99] SELLONI A, 1982, PHYS REV LETT 1015

[100] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489